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FIELD INDUCED TUNNELING IN HG1-XCDXTE PHOTODIODESANDERSON WW.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1080-1082; BIBL. 13 REF.Article

LARGE OPTICAL NONLINEARITIES AND CW DEGENERATE FOUR-WAVE MIXING IN HGCDTEJAIN RK; STEEL DG.1982; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1982; VOL. 43; NO 1; PP. 72-77; BIBL. 27 REF.Article

NON-LINEAR REFRACTIVE INDEX CHANGES IN CDHGTE AT 175 K WITH 10.6 MU M RADIATIONHILL JR; PARRY G; MILLER A et al.1982; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1982; VOL. 43; NO 2; PP. 151-156; BIBL. 16 REF.Article

EVIDENCE OF STRESS-MEDIATED HG MIGRATION IN HG1-XCDXTERACCAH PM; LEE U; SILBERMAN JA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 374-376; BIBL. 10 REF.Article

CDTE/HGCDTE INDIUM-DIFFUSED PHOTODIODESMIGLIORATO P; FARROW RFC; DEAN AB et al.1982; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1982; VOL. 22; NO 6; PP. 331-336; BIBL. 13 REF.Article

ELECTRONICALLY SCANNED CMT DETECTOR ARRAY FOR THE 8-14 MU M BANDBALLINGALL RA; BLENKINSOP ID; ELLIOTT CT et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 7; PP. 285-287; BIBL. 1 REF.Article

FOUR-WAVE MIXING VIA OPTICALLY GENERATED FREE CARRIERS IN HG1-XCDXTEYUEN SY.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 590-592; BIBL. 15 REF.Article

THEORY OF GENERATION RECOMBINATION NOISE IN INTRINSIC PHOTOCONDUCTORSSMITH DL.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 7051-7060; BIBL. 12 REF.Article

DEEP LEVEL STUDIES OF HG1-XCDXTE. II: CORRELATION WITH PHOTODIODE PERFORMANCEPOLLA DL; REINE MB; JONES CE et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5132-5138; BIBL. 15 REF.Article

OBSERVATION OF DEFECTS IN MERCURY CADMIUM TELLURIDE CRYSTALS GROWN BY CHEMICAL VAPOR TRANSPORTIRENE EA; TIERNEY E; WIEDEMEIER H et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 710-712; BIBL. 8 REF.Article

SPUTTERING YIELD OF CDXHG1-XTE BOMBARDED BY MERCURY IONSZOZIME A; COHEN SOLAL G.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 76; NO 3; PP. 273-282; BIBL. 21 REF.Article

CHEMICAL TRENDS FOR DEFECT ENERGY LEVELS IN HG1-XCDXTEKOBAYASHI A; SANKEY OF; DOW JD et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 10; PP. 6367-6379; BIBL. 28 REF.Article

A METHOD FOR ROUTINE CHARACTERISATION OF THE HOLE CONCENTRATION IN P-TYPE-CADMIUM MERCURY TELLURIDEDENNIS PNJ; ELLIOTT CT; JONES CL et al.1982; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1982; VOL. 22; NO 3; PP. 167-169; BIBL. 3 REF.Article

MILLIMETER-WAVE GENERATION AT 110 GHZ BY LASER MODULATION OF A HGCDTC PHOTODIODETAUR Y; CHEUNG DT; HUFFMAN EH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 819-821; BIBL. 9 REF.Article

Bipolar transistor action in cadmium mercury tellurideASHLEY, T; CRIMES, G; ELLIOTT, C. T et al.Electronics Letters. 1986, Vol 22, Num 11, pp 611-613, issn 0013-5194Article

Thermally induced optical bistability in CdHgTeCRAIG, D; DYBALL, M. R; MILLER, A et al.Optics communications. 1985, Vol 54, Num 6, pp 383-387, issn 0030-4018Article

The influence of doping on ultimate performance of CdxHg1-xTe photoresistorsJOZWIKOWSKI, K; PIOTROWSKI, J.Journal of Technical Physics. 1984, Vol 25, Num 3-4, pp 487-492, issn 0324-8313Article

On the optimum thickness of a photoconductive detector: a 0.1 eV HgCdTe detectorGOPAL, V; WARRIER, A. V. R.Infrared physics. 1984, Vol 24, Num 4, pp 387-390, issn 0020-0891Article

Performance of p+-n HgCdTe photodiodesROGALSKI, A; JOZWIKOWSKA, A; JOZWIKOWSKI, K et al.Infrared physics. 1992, Vol 33, Num 6, pp 463-473, issn 0020-0891Article

(Hg, Cd)Te photoresistors with optical resonance cavity for 10.6 um radiationNIEDZIELA, T.Journal of Technical Physics. 1990, Vol 31, Num 1, pp 69-82, issn 0324-8313Article

Photoemission studies of the interfacial reactions between ZnS and anodic oxide film of HgCdTeJIN, S; LAU, W. M.Applied physics letters. 1989, Vol 55, Num 3, pp 209-211, issn 0003-6951, 3 p.Article

Influence of dislocations on the performance of 3 to 5 μm Hg1-xCdxTe graded gap photoresistors = Influence des dislocations sur les performances des photorésistors de Hg1-xCdxTe, de 3 à 5 μm, à gap amélioréMAŁACHOWSKI, M. J; PIOTROWSKI, J; ROGALSKI, A et al.Physica status solidi. A. Applied research. 1989, Vol 113, Num 2, pp 467-476, issn 0031-8965, 10 p.Article

Supersymmetry in heterojunctions: band-inverting contact on the basis of Pb1-xSnxTe and Hg1-xCdxTePANKRATOV, O. A; PAKHOMOV, S. V; VOLKOV, B. A et al.Solid state communications. 1987, Vol 61, Num 2, pp 93-96, issn 0038-1098Article

Photoelectromagetic effect in CdxHg1-xTe graded-gap structuresGENZOW, D; JOZWIKOWSKA, A; JOZWIKOWSKI, K et al.Infrared physics. 1984, Vol 24, Num 1, pp 21-24, issn 0020-0891Article

Caractérisation en bruit des photodiodes P.I.N. Hg1-xCdxTe à λ=1,3 μm = Noise characterization of P.I.N. Hg1-xCdxTe photodides at λ=1,3 μmORSAL, B; ALABDRA, R; MAILLE, C et al.Revue de physique appliquée. 1984, Vol 19, Num 2, pp 63-67, issn 0035-1687Article

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